Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US14643208Application Date: 2015-03-10
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Publication No.: US09490351B2Publication Date: 2016-11-08
- Inventor: Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2011-067866 20110325
- Main IPC: H01L21/34
- IPC: H01L21/34 ; H01L29/66 ; H01L29/423 ; H01L29/786 ; H01L21/02 ; H01L21/44 ; H01L21/4757 ; H01L21/477 ; H01L29/04 ; H01L29/24
Abstract:
An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.
Public/Granted literature
- US20150179777A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-06-25
Information query
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