Invention Grant
- Patent Title: Sub-fin device isolation
- Patent Title (中): 子鳍片器件隔离
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Application No.: US14581244Application Date: 2014-12-23
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Publication No.: US09496181B2Publication Date: 2016-11-15
- Inventor: Stanley Seungchul Song , Jeffrey Junhao Xu , Vladimir Machkaoutsan , Mustafa Badaroglu , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/78
Abstract:
A fin-based structure may include fins on a surface of a semiconductor substrate. Each of the fins may include a doped portion proximate to the surface of the semiconductor substrate. The fin-based structure may also include an isolation layer disposed between the fins and on the surface of the semiconductor substrate. The fin-based structure may also include a recessed isolation liner on sidewalls of the doped portion of the fins. An unlined doped portion of the fins may extend from the recessed isolation liner to an active portion of the fins at a surface of the isolation layer. The isolation layer is disposed on the unlined doped portion of the fins.
Public/Granted literature
- US20160181161A1 SUB-FIN DEVICE ISOLATION Public/Granted day:2016-06-23
Information query
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