Invention Grant
- Patent Title: Capacitor using middle of line (MOL) conductive layers
- Patent Title (中): 使用中线(MOL)导电层的电容器
-
Application No.: US14690144Application Date: 2015-04-17
-
Publication No.: US09496254B2Publication Date: 2016-11-15
- Inventor: PR Chidambaram , Bin Yang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Alan Gordon; Kenneth Vu
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/06 ; H01L49/02 ; H01L23/522

Abstract:
A method for fabricating a metal-insulator-metal (MIM) capacitor includes depositing a first middle of line (MOL) conductive layer over a shallow trench isolation (STI) region of a semiconductor substrate. The first MOL conductive layer provides a first plate of the MIM capacitor as well as a first set of local interconnects to source and drain regions of a semiconductor device. The method also includes depositing an insulator layer on the first MOL conductive layer as a dielectric layer of the MIM capacitor. The method further includes depositing a second MOL conductive layer on the insulator layer as a second plate of the MIM capacitor.
Public/Granted literature
- US20150221638A1 CAPACITOR USING MIDDLE OF LINE (MOL) CONDUCTIVE LAYERS Public/Granted day:2015-08-06
Information query
IPC分类: