Invention Grant
US09496276B2 CMP fabrication solution for split gate memory embedded in HK-MG process
有权
嵌入在HK-MG工艺中的分离栅极存储器的CMP制造解决方案
- Patent Title: CMP fabrication solution for split gate memory embedded in HK-MG process
- Patent Title (中): 嵌入在HK-MG工艺中的分离栅极存储器的CMP制造解决方案
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Application No.: US14092912Application Date: 2013-11-27
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Publication No.: US09496276B2Publication Date: 2016-11-15
- Inventor: Harry Hak-Lay Chuang , Wei-Cheng Wu , Chang-Ming Wu , Shih-Chang Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/792 ; H01L27/115
Abstract:
A semiconductor device includes a substrate, at least one logic device and a split gate memory device. The at least one logic device is located on the substrate. The split gate memory device is located on the substrate and comprises a memory gate and a select gate. The memory gate and the select gate are adjacent to and electrically isolated with each other. A top of the select gate is higher than a top of the memory gate.
Public/Granted literature
- US20150145022A1 CMP FABRICATION SOLUTION FOR SPLIT GATE MEMORY EMBEDDED IN HK-MG PROCESS Public/Granted day:2015-05-28
Information query
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