发明授权
US09496344B2 Semiconductor device including well regions with different impurity densities
有权
包括具有不同杂质浓度的阱区的半导体器件
- 专利标题： Semiconductor device including well regions with different impurity densities
- 专利标题（中）： 包括具有不同杂质浓度的阱区的半导体器件
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申请号： US14387727申请日： 2013-02-26
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公开(公告)号： US09496344B2公开(公告)日： 2016-11-15
- 发明人: Rina Tanaka , Akihiko Furukawa , Masayuki Imaizumi , Yuji Abe
- 申请人： Rina Tanaka , Akihiko Furukawa , Masayuki Imaizumi , Yuji Abe
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-081097 20120330
- 国际申请： PCT/JP2013/001084 WO 20130226
- 国际公布： WO2013/145545 WO 20131003
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L29/47 ; H01L29/872 ; H01L29/66 ; H01L29/06 ; H01L29/36
摘要：
In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.
公开/授权文献
- US20150048384A1 SEMICONDUCTOR DEVICE 公开/授权日：2015-02-19
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