发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14220544申请日： 2014-03-20
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公开(公告)号： US09496409B2公开(公告)日： 2016-11-15
- 发明人: Shunpei Yamazaki , Daisuke Matsubayashi
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JP2013-064522 20130326
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66
摘要：
A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second source electrode which extends beyond an end portion of the first source electrode to be in contact with the semiconductor layer is formed; a second drain electrode which extends beyond an end portion of the first drain electrode to be in contact with the semiconductor layer is formed; a first sidewall is formed in contact with a side surface of the second source electrode and the semiconductor layer; a second sidewall is formed in contact with a side surface of the second drain electrode and the semiconductor layer; and a gate electrode is formed to overlap the first sidewall, the second sidewall, and the semiconductor layer with a gate insulating layer provided therebetween.
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