Invention Grant
- Patent Title: Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
- Patent Title (中): 具有耐裂纹阻挡结构的半导体发光二极管及其制造方法
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Application No.: US13790369Application Date: 2013-03-08
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Publication No.: US09496458B2Publication Date: 2016-11-15
- Inventor: Matthew Donofrio , Michael Bergmann , Kevin Haberern , Kevin Schneider
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L33/12
- IPC: H01L33/12 ; H01L33/60 ; H01L33/44 ; H01L33/62
Abstract:
A light emitting device includes an epitaxial region, an insulating layer on the epitaxial region, a bond pad on the insulating layer, and a crack reducing feature in the insulating layer. The crack reducing feature is configured to reduce the propagation of cracks in the insulating layer to an outside surface of the insulating layer. Related methods are also disclosed.
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