Invention Grant
- Patent Title: Charged particle beam apparatus
- Patent Title (中): 带电粒子束装置
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Application No.: US14760259Application Date: 2014-01-22
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Publication No.: US09502212B2Publication Date: 2016-11-22
- Inventor: Yuzuru Mizuhara , Miki Isawa , Minoru Yamazaki , Hitoshi Tamura , Hideyuki Kazumi
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2013-009734 20130123
- International Application: PCT/JP2014/051171 WO 20140122
- International Announcement: WO2014/115741 WO 20140731
- Main IPC: H01J37/26
- IPC: H01J37/26 ; H01J37/147 ; H01J37/244 ; H01J37/28

Abstract:
An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.
Public/Granted literature
- US20150348748A1 Charged Particle Beam Apparatus Public/Granted day:2015-12-03
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