Invention Grant
- Patent Title: Thin-film transistor substrate, related light-emitting apparatus, and related manufacturing method
- Patent Title (中): 薄膜晶体管基板,相关发光装置及相关的制造方法
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Application No.: US14161243Application Date: 2014-01-22
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Publication No.: US09502484B2Publication Date: 2016-11-22
- Inventor: Dong-Won Lee
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2013-0073963 20130626
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L27/12 ; H01L51/56 ; H01L29/786

Abstract:
A thin-film transistor substrate may include an electrical wiring structure that includes a first electrode, which may be a source electrode, a drain electrode, or a capacitor electrode. The thin-film transistor substrate may further include a first insulating layer that directly contacts a first side of the first electrode. The thin-film transistor substrate may further include a second insulating layer that directly contacts a second side of the first electrode opposite the first side of the first electrode. The thin-film transistor substrate may further include a first filling layer that is disposed between the first insulating layer and the second insulating layer.
Public/Granted literature
- US20150001492A1 THIN-FILM TRANSISTOR SUBSTRATE, RELATED LIGHT-EMITTING APPARATUS, AND RELATED MANUFACTURING METHOD Public/Granted day:2015-01-01
Information query
IPC分类: