Invention Grant
- Patent Title: Local strain generation in an SOI substrate
- Patent Title (中): SOI衬底中的局部应变产生
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Application No.: US14791713Application Date: 2015-07-06
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Publication No.: US09502558B2Publication Date: 2016-11-22
- Inventor: Shay Reboh , Laurent Grenouillet , Cyrille Le Royer , Sylvain Maitrejean , Yves Morand
- Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives , STMICROELECTRONICS (CROLLES 2) SAS
- Applicant Address: FR Paris FR Crolles
- Assignee: Commissariat a l'energie atomique et aux energies alternatives,STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives,STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee Address: FR Paris FR Crolles
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1456521 20140707
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/265 ; H01L29/66
Abstract:
Method to strain a channel zone of a transistor of the semiconductor on insulator type transistor that makes use of an SMT stress memorization technique in which regions located under the insulation layer of the substrate (FIG. 6) are amorphized, before the transistor gate is made.
Public/Granted literature
- US20160005862A1 GENERATION OF LOCALIZED STRAIN IN A SOI SUBSTRATE Public/Granted day:2016-01-07
Information query
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