A method of manufacturing an integrated circuit including photonic components on a silicon layer and a laser made of a III-V group material includes providing the silicon layer positioned on a first insulating layer that is positioned on a support. First trenches are etched through the silicon layer and stop on the first insulating layer, and the first trenches are covered with a silicon nitride layer. Second trenches are etched through a portion of the silicon layer, and the first and second trenches are filled with silicon oxide, which are planarized. The method further includes removing the support and the first insulating layer, and bonding a wafer including a III-V group heterostructure on the rear surface of the silicon layer.