There are provided a top coat composition and a patterning process using that composition, which reduce the effect of contaminants in the surrounding atmosphere on the resist film in absorbing OOB light and in reducing film loss of the resist pattern and bridging between patterns, and also enhances the sensitivity of the resist film and suppresses the emission of outgas from the resist film. The resist top coat composition of the present invention is formed on a photoresist film formed on a wafer, and is used in a patterning process performed by lithography in which, after exposure, developing is performed. The resist top coat composition contains a polymer as a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group shown by the following general formula (1), a C6-C10 ether compound, and a C7-C12 hydrocarbon compound, and wherein m is 1 or 2, and p is in the range of 0