发明授权
US09508395B2 Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator
有权
三维一次可编程存储器，包括离线读/写 - 电压发生器
- 专利标题： Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator
- 专利标题（中）： 三维一次可编程存储器，包括离线读/写 - 电压发生器
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申请号： US15062117申请日： 2016-03-06
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公开(公告)号： US09508395B2公开(公告)日： 2016-11-29
- 发明人: Guobiao Zhang
- 申请人： HangZhou HaiCun Information Technology Co., Ltd.
- 申请人地址： CN HangZhou, Zhejiang US OR Corvallis
- 专利权人： HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- 当前专利权人： HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- 当前专利权人地址： CN HangZhou, Zhejiang US OR Corvallis
- 优先权： CN201610083717 20160208
- 主分类号： G11C5/02
- IPC分类号： G11C5/02 ; G11C5/06 ; G11C5/14 ; G11C5/04 ; G11C8/14 ; G11C13/00 ; H01L23/00 ; H01L25/065 ; H01L25/10 ; G11C29/04
摘要：
The present invention discloses a three-dimensional one-time-programmable memory (3D-OTP) comprising an off-die read/write-voltage generator (VR/VW-generator). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a VR/VW-generator of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The VR/VW-generator generates at least a read voltage and/or a write voltage different from a supply voltage.
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