Method of manufacturing semiconductor device

Invention Grant

US09508554B2 Method of manufacturing semiconductor device 有权

Title translation: 制造半导体器件的方法

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Patent Title: Method of manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US14869988

Application Date: 2015-09-29
Publication No.: US09508554B2

Publication Date: 2016-11-29
Inventor: Kazuharu Yamabe , Shinichiro Abe , Shoji Yoshida , Hideaki Yamakoshi , Toshio Kudo , Seiji Muranaka , Fukuo Owada , Daisuke Okada
Applicant: Renesas Electronics Corporation
Applicant Address: JP Tokyo
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Tokyo
Agency: Shapiro, Gabor and Rosenberger, PLLC
Priority: JP2014-201387 20140930
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/28 ; H01L29/66 ; H01L29/792

Method of manufacturing semiconductor device

Abstract:

To provide a semiconductor device having improved performance while improving the throughput in the manufacturing steps of the semiconductor device. An insulating film portion comprised of first, second, third, fourth, and fifth insulating films is formed on a semiconductor substrate. The second insulating film is a first charge storage film and the fourth insulating film is a second charge storage film. The first charge storage film contains silicon and nitrogen; the third insulating film contains silicon and oxygen; and the second charge storage film contains silicon and nitrogen. The thickness of the third insulating film is smaller than that of the first charge storage film and the thickness of the second charge storage film is greater than that of the first charge storage film. The third insulating film is formed by treating the upper surface of the first charge storage film with a water-containing treatment liquid.

Abstract(Chinese):

提供具有改进性能的半导体器件，同时提高半导体器件的制造步骤中的吞吐量。在半导体衬底上形成由第一，第二，第三，第四和第五绝缘膜构成的绝缘膜部分。第二绝缘膜是第一电荷存储膜，第四绝缘膜是第二电荷存储膜。第一电荷储存膜含有硅和氮; 第三绝缘膜含有硅和氧; 并且第二电荷储存膜含有硅和氮。第三绝缘膜的厚度小于第一电荷存储膜的厚度，并且第二电荷存储膜的厚度大于第一电荷存储膜的厚度。第三绝缘膜通过用含水处理液处理第一电荷存储膜的上表面而形成。

Public/Granted literature

US20160093499A1 Method of Manufacturing Semiconductor Device Public/Granted day:2016-03-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）