发明授权
- 专利标题: Conductive contacts having varying widths and method of manufacturing same
- 专利标题(中): 具有不同宽度的导电触点及其制造方法
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申请号: US14804617申请日: 2015-07-21
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公开(公告)号: US09508668B2公开(公告)日: 2016-11-29
- 发明人: Yen-Liang Lin , Yu-Jen Tseng , Chang-Chia Huang , Tin-Hao Kuo , Chen-Shien Chen
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L21/768 ; H01L21/48 ; H01L23/498
摘要:
A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.
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