Invention Grant
US09508867B2 Thin film transistor, array substrate, method of fabricating same, and display device
有权
薄膜晶体管，阵列基板，其制造方法和显示装置
- Patent Title: Thin film transistor, array substrate, method of fabricating same, and display device
- Patent Title (中): 薄膜晶体管，阵列基板，其制造方法和显示装置
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Application No.: US14500184Application Date: 2014-09-29
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Publication No.: US09508867B2Publication Date: 2016-11-29
- Inventor: Dongsheng Li , Ning Chen , Xingdong Liu , Wei Guo
- Applicant: Boe Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: Boe Technology Group Co., Ltd.
- Current Assignee: Boe Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Calfee, Halter & Griswold LLP
- Priority: CN201410213599 20140520
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/417 ; H01L29/66 ; H01L27/12 ; H01L29/423
Abstract:
A thin film transistor, an array substrate, a method of fabricating the same, and a display device are provided. The thin film transistor includes a substrate plate, and an active layer, a source, and a drain which are arranged on the substrate plate. The thin film transistor also includes an inclined portion which is arranged on the substrate plate in an inclined manner. The active layer is at least partially arranged on the inclined portion. The source and the drain are arranged over the active layer and at least partially overlap the active layer. In this manner, the size of the thin film transistor in a direction parallel with the substrate plate can be effectively reduced.
Public/Granted literature
- US20150340512A1 THIN FILM TRANSISTOR, ARRAY SUBSTRATE, METHOD OF FABRICATING SAME, AND DISPLAY DEVICE Public/Granted day:2015-11-26
Information query
IPC分类:
