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US09508928B2 Nanochannel array of nanowires for resistive memory devices 有权
用于电阻式存储器件的纳米线纳米通道阵列

Nanochannel array of nanowires for resistive memory devices
摘要：
A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.
摘要（中）：

电阻式存储器结构包括夹着绝缘区域的两个电极。 该结构还包括提供两个电极之间的导电路径的纳米通道阵列。 纳米通道阵列包括从一个电极延伸到另一个电极的多个纳米线。

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