Invention Grant
- Patent Title: High-frequency module and method for manufacturing the same
- Patent Title (中): 高频模块及其制造方法
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Application No.: US14740507Application Date: 2015-06-16
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Publication No.: US09509058B2Publication Date: 2016-11-29
- Inventor: Hiroshi Matsumura , Daijiro Ishibashi , Toshihide Suzuki , Yoichi Kawano
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2014-138239 20140704
- Main IPC: H01Q19/10
- IPC: H01Q19/10 ; H01L21/56 ; H01L23/31 ; H01L23/29 ; H01L23/66 ; H01L23/00 ; H01Q1/22 ; H01Q7/00

Abstract:
A high-frequency module includes an integrated body including a semiconductor chip and a reflector, the semiconductor and the reflector being integrated by a resin; an antenna provided with a space from the reflector; and a rewiring layer provided on the surface of the integrated body, the rewiring layer including a rewiring line electrically coupling the semiconductor chip to the antenna. Further, a method for manufacturing a high-frequency module, the method includes forming an integrated body by integrating a semiconductor chip with a reflector by a resin; and forming a rewiring layer on the surface of the integrated body, the rewiring layer including a rewiring line electrically coupling the semiconductor chip to an antenna provided with a space from the reflector.
Public/Granted literature
- US20160006131A1 HIGH-FREQUENCY MODULE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-01-07
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