Invention Grant
- Patent Title: RF amplifier module and methods of manufacture thereof
- Patent Title (中): RF放大器模块及其制造方法
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Application No.: US14832525Application Date: 2015-08-21
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Publication No.: US09509251B2Publication Date: 2016-11-29
- Inventor: Jeffrey K. Jones
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agent Sherry W. Schumm
- Main IPC: H03F3/195
- IPC: H03F3/195 ; H03F1/02 ; H01L23/00 ; H01L23/31 ; H01L23/495 ; H01L21/56 ; H01L23/522 ; H03F3/19 ; H01L23/535

Abstract:
An amplifier module includes a module substrate. Conductive interconnect structures and an amplifier device are coupled to a top surface of the module substrate. The interconnect structures partially cover the module substrate top surface to define conductor-less areas at the top surface. The amplifier device includes a semiconductor substrate, a transistor, a conductive feature coupled to a bottom surface of the semiconductor substrate and to at least one of the interconnect structures, and a filter circuit electrically coupled to the transistor. The conductive feature only partially covers the semiconductor substrate bottom surface to define a conductor-less region that spans a portion of the bottom surface. The conductor-less region is aligned with at least one of the conductor-less areas at the module substrate top surface. The filter circuit includes a passive component formed over a portion of the semiconductor substrate top surface that is directly opposite the conductor-less region.
Public/Granted literature
- US20160285420A1 RF AMPLIFIER MODULE AND METHODS OF MANUFACTURE THEREOF Public/Granted day:2016-09-29
Information query
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