Invention Grant
- Patent Title: Linearized gate capacitance in power amplifiers
- Patent Title (中): 功率放大器中的线性化栅极电容
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Application No.: US14446265Application Date: 2014-07-29
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Publication No.: US09509256B2Publication Date: 2016-11-29
- Inventor: Saihua Lin , Anup Savla
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Procopio, Cory, Hargreaves & Savitch, LLP
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F1/32 ; H03F3/19 ; H03F3/21 ; H03F3/24
Abstract:
An apparatus includes: a plurality of amplification stages, each stage comprising a cascode transistor; and a bridge circuit coupled between gate terminals of cascode transistors in two adjacent stages of the plurality of amplification stages, the bridge circuit including a plurality of diodes.
Public/Granted literature
- US20160036393A1 LINEARIZED GATE CAPACITANCE IN POWER AMPLIFIERS Public/Granted day:2016-02-04
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