Invention Grant
US09511996B2 Methods of forming semiconductor structures including MEMS devices and integrated circuits on common sides of substrates, and related structures and devices
有权
在基板的共同侧上形成包括MEMS器件和集成电路的半导体结构以及相关结构和器件的方法
- Patent Title: Methods of forming semiconductor structures including MEMS devices and integrated circuits on common sides of substrates, and related structures and devices
- Patent Title (中): 在基板的共同侧上形成包括MEMS器件和集成电路的半导体结构以及相关结构和器件的方法
-
Application No.: US14416860Application Date: 2013-07-08
-
Publication No.: US09511996B2Publication Date: 2016-12-06
- Inventor: Mariam Sadaka , Bernard Aspar , Chrystelle Lagahe Blanchard
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- International Application: PCT/IB2013/001488 WO 20130708
- International Announcement: WO2014/020388 WO 20140206
- Main IPC: H01L27/14
- IPC: H01L27/14 ; B81C1/00 ; H03H9/10 ; B81B7/00
Abstract:
Methods are used to form semiconductor devices that include an integrated circuit and a microelectromechanical system (MEMS) device operatively coupled with the integrated circuit. At least a portion of an integrated circuit may be fabricated on a surface of a substrate, and a MEMS device may be formed over the at least a portion of the integrated circuit. The MEMS device may be operatively coupled with the integrated circuit. Semiconductor structures and electronic devices including such structures are formed using such methods.
Public/Granted literature
Information query
IPC分类:
