发明授权
US09514796B1 Magnetic storage cell memory with back hop-prevention 有权
具有防跳跃功能的磁存储单元存储器

Magnetic storage cell memory with back hop-prevention
摘要:
An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.
公开/授权文献
信息查询
0/0