发明授权
- 专利标题: Magnetic storage cell memory with back hop-prevention
- 专利标题(中): 具有防跳跃功能的磁存储单元存储器
-
申请号: US14751801申请日: 2015-06-26
-
公开(公告)号: US09514796B1公开(公告)日: 2016-12-06
- 发明人: Charles Augustine , Shigeki Tomishima , Wei Wu , Shih-Lien Lu , James W. Tschanz , Georgios Panagopoulos , Helia Naeimi
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C11/14 ; G11C11/15 ; G11C11/16
摘要:
An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.
公开/授权文献
- US20160379700A1 MAGNETIC STORAGE CELL MEMORY WITH BACK HOP-PREVENTION 公开/授权日:2016-12-29
信息查询