Invention Grant
- Patent Title: Light emitting diode and method of fabricating the same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US14631062Application Date: 2015-02-25
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Publication No.: US09515121B2Publication Date: 2016-12-06
- Inventor: Se Hee Oh , Seom Geun Lee , Yeo Jin Yoon , Hyun Haeng Lee , Mae Yi Kim
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-Si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-Si
- Agency: Perkins Coie LLP
- Priority: KR10-2014-0023487 20140227
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L27/15 ; H01L33/62 ; H01L33/38

Abstract:
An exemplary light emitting diode includes a substrate; a first light emitting cell and a second light emitting cell disposed over the substrate and separated from each other; and an interconnection electrically connecting the first light emitting cell to the second light emitting cell. Each of the first and second light emitting cells includes a first conductive-type semiconductor layer, a second conductive-type semiconductor layer disposed over the first conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer. At least one of the first light emitting cell and the second light emitting cell includes a side surface inclined with respect to the substrate. The side surface includes a first inclined portion forming an acute angle with respect to the substrate, a second inclined portion forming an obtuse angle with respect to the substrate, and an inclination discontinuity section.
Public/Granted literature
- US20150243706A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-08-27
Information query
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