发明授权
- 专利标题： Magnetic memory, magnetic memory device, and method for manufacturing magnetic memory
- 专利标题（中）： 磁存储器，磁存储器件和磁存储器的制造方法
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申请号： US14829080申请日： 2015-08-18
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公开(公告)号： US09515124B2公开(公告)日： 2016-12-06
- 发明人: Shiho Nakamura , Yuuzo Kamiguchi , Yasuaki Ootera , Tsuyoshi Kondo
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- 优先权： JP2014-170289 20140825
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/02 ; H01L43/08 ; H01L43/12 ; G11C11/16 ; G11C19/08
摘要：
According to one embodiment, a magnetic memory including a first magnetic unit, a first nonmagnetic unit, a first fixed magnetic unit, a second fixed magnetic unit, a first electrode, a second electrode, and a third electrode. The first magnetic unit extends in a first direction. The first magnetic unit includes a plurality of magnetic domains arranged in the first direction. The first nonmagnetic unit contacts one end of the first magnetic unit. The first fixed magnetic unit is separated from the first magnetic unit. The first fixed magnetic unit contacts the first nonmagnetic unit. The second fixed magnetic unit is separated from the first magnetic unit and the first fixed magnetic unit. The second fixed magnetic unit is in contact with the first nonmagnetic unit. The second fixed magnetic unit is magnetized in a direction different from a magnetization direction of the first fixed magnetic unit.
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