Invention Grant
- Patent Title: Edge termination structure for a power integrated device and corresponding manufacturing process
- Patent Title (中): 功率集成器件的边缘端接结构和相应的制造工艺
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Application No.: US14666013Application Date: 2015-03-23
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Publication No.: US09515136B2Publication Date: 2016-12-06
- Inventor: Leonardo Fragapane
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Priority: ITTO2014A0485 20140618
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0312 ; H01L29/06 ; H01L29/16 ; H01L21/761 ; H01L21/266 ; H01L21/82 ; H01L29/739 ; H01L29/78
Abstract:
An integrated device has: a structural layer of semiconductor material doped with a first conductivity type and having a top surface defining a plane; a functional region, doped with a second conductivity type, arranged in an active area of the structural layer at the top surface, in the proximity of an edge area of the integrated device, which externally surrounds the active area; and an edge termination region, doped with the second conductivity type, joined to the functional region and arranged in the edge area. The edge termination region has a doping profile and a junction depth that vary in a first direction parallel to the plane.
Public/Granted literature
- US20150372075A1 EDGE TERMINATION STRUCTURE FOR A POWER INTEGRATED DEVICE AND CORRESPONDING MANUFACTURING PROCESS Public/Granted day:2015-12-24
Information query
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