发明授权
- 专利标题： Patterned strained semiconductor substrate and device
- 专利标题（中）： 图形应变半导体衬底和器件
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申请号： US12015272申请日： 2008-01-16
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公开(公告)号： US09515140B2公开(公告)日： 2016-12-06
- 发明人: Kangguo Cheng , Ramachandra Divakaruni
- 申请人： Kangguo Cheng , Ramachandra Divakaruni
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Roberts Mlotkowski Safran Cole & Calderon, P.C.
- 代理商 Michael LeStrange; Andrew M. Calderon
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L29/10 ; H01L29/739 ; H01L29/786 ; H01L21/8234
摘要：
A method that includes forming a pattern of strained material and relaxed material on a substrate; forming a strained device in the strained material; and forming a non-strained device in the relaxed material is disclosed. In one embodiment, the strained material is silicon (Si) in either a tensile or compressive state, and the relaxed material is Si in a normal state. A buffer layer of silicon germanium (SiGe), silicon carbon (SiC), or similar material is formed on the substrate and has a lattice constant/structure mis-match with the substrate. A relaxed layer of SiGe, SiC, or similar material is formed on the buffer layer and places the strained material in the tensile or compressive state. In another embodiment, carbon-doped silicon or germanium-doped silicon is used to form the strained material. The structure includes a multi-layered substrate having strained and non-strained materials patterned thereon.
公开/授权文献
- US20080135874A1 PATTERNED STRAINED SEMICONDUCTOR SUBSTRATE AND DEVICE 公开/授权日：2008-06-12