- 专利标题： FinFET device with channel strain
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申请号： US15135844申请日： 2016-04-22
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公开(公告)号： US09515141B1公开(公告)日： 2016-12-06
- 发明人: Bruce B. Doris , Hong He , Sivananda K. Kanakasabapathy , Gauri Karve , Fee Li Lie
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Feb Cabrasawan
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L29/161 ; H01L29/165 ; H01L29/66 ; H01L21/265 ; H01L21/324
摘要：
A method for fabricating a semiconductor device, the method comprises forming a fin on a substrate, forming a dummy gate stack on the fin and the substrate, removing a portion of an exposed portion of the fin, forming a source/drain region on an exposed portion of the fin, forming a conductive contact on the source/drain region, removing the dummy gate stack to expose a channel region of the fin, implanting ions in the channel region of the fin, performing an annealing process, and forming a gate stack on the channel region of the fin.
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