A method of forming a pattern may include: disposing a first material layer; disposing a first photoresist film including first shot regions; exposing the first shot regions to light, wherein an overlapping region between first shot regions may be overlappingly exposed to light exposures onto the first shot regions; forming a first photoresist pattern by developing the first photoresist film; forming a first pattern by etching the first material layer using the first photoresist pattern as an etching mask; disposing a second material layer on the first pattern; disposing a second photoresist film including second shot regions; exposing the second shot regions, wherein a boundary region between second shot regions may be disposed spaced apart from the overlapping region; forming a second photoresist pattern by developing the second photoresist film; and forming a second pattern by etching the second material layer using the second photoresist pattern as an etching mask.