Invention Grant
US09520190B2 Modified reset state for enhanced read margin of phase change memory
有权
修改复位状态，提高相变存储器的读余量
- Patent Title: Modified reset state for enhanced read margin of phase change memory
- Patent Title (中): 修改复位状态，提高相变存储器的读余量
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Application No.: US14563731Application Date: 2014-12-08
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Publication No.: US09520190B2Publication Date: 2016-12-13
- Inventor: Mattia Boniardi , Andrea Redaelli , Fabio Pellizzer , Daniele Ielmini , Agostino Pirovano
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
Subject matter disclosed herein relates to techniques involving a structural relaxation (SR) phenomenon for increasing resistance of a Reset state of phase change memory.
Public/Granted literature
- US20150092483A1 MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY Public/Granted day:2015-04-02
Information query
