发明授权
- 专利标题： Fully-depleted silicon-on-insulator transistors
- 专利标题（中）： 完全耗尽的绝缘体上硅晶体管
-
申请号： US14882871申请日： 2015-10-14
-
公开(公告)号： US09520329B2公开(公告)日： 2016-12-13
- 发明人: Terence B. Hook , Horacio Mendez
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotskowski Safran & Cole, P.C.
- 代理商 Steven Meyers; Andrew M. Calderon
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/00 ; H01L21/76 ; H01L21/84 ; H01L27/092 ; H01L21/326 ; H01L21/8234 ; H01L29/36 ; H01L29/06 ; H01L21/8238
摘要：
A fully-depleted silicon-on-insulator (FDSOI) semiconductor structure includes: a first PFET, a second PFET, and a third PFET each having a different threshold voltage and each being over an n-well that is biased to a first voltage; and a first NFET, a second NFET, and a third NFET each having a different threshold voltage and each being over a p-type substrate that is biased to a second voltage. The second voltage is different than the first voltage.
公开/授权文献
- US20160079127A1 FULLY-DEPLETED SILICON-ON-INSULATOR TRANSISTORS 公开/授权日：2016-03-17
信息查询
IPC分类:
