发明授权
- 专利标题： Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure
- 专利标题（中）： 在硅衬底和包含立方晶相结构的器件上生长立方晶相结构
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申请号： US14383833申请日： 2013-03-15
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公开(公告)号： US09520472B2公开(公告)日： 2016-12-13
- 发明人: Steven R. J. Brueck , Seung-Chang Lee , Christian Wetzel , Theeradetch Detchprohm , Christoph Stark
- 申请人： STC.UNM
- 申请人地址： US NM Albuquerque
- 专利权人： STC.UNM
- 当前专利权人： STC.UNM
- 当前专利权人地址： US NM Albuquerque
- 代理机构： MH2 Technology Law Group LLP
- 国际申请： PCT/US2013/032613 WO 20130315
- 国际公布： WO2013/165620 WO 20131107
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/06 ; H01L29/20 ; H01L33/16 ; H01L33/24 ; H01L29/15
摘要：
A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.
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