Invention Grant
- Patent Title: Low temperature poly-silicon thin film preparation apparatus and method for preparing the same
- Patent Title (中): 低温多晶硅薄膜制备装置及其制备方法
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Application No.: US14408337Application Date: 2014-09-23
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Publication No.: US09522844B2Publication Date: 2016-12-20
- Inventor: Jia Li
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Priority: CN201410444447 20140903
- International Application: PCT/CN2014/087179 WO 20140923
- International Announcement: WO2016/033844 WO 20160310
- Main IPC: F26B21/06
- IPC: F26B21/06 ; C03C17/245 ; C03C23/00

Abstract:
A low temperature poly-silicon thin film preparation apparatus and a method for preparing the same are disclosed, the preparation apparatus comprises a substrate cleaning tank and an ozone generating device connected thereto, such that not only can blow off residual liquid on a surface of a glass substrate, but can also allow the glass substrate to directly contact the ozone, such that a silicon film on the surface of the glass substrate is more smooth and less impure, and an oxide film formed on the surface is more uniform since it contacts with the ozone at the first time after being cleaned by hydrofluoric acid, therefore the crystalline effect is more excellent.
Public/Granted literature
- US20160060167A1 LOW TEMPERATURE POLY-SILICON THIN FILM PREPARATION APPARATUS AND METHOD FOR PREPARING THE SAME Public/Granted day:2016-03-03
Information query
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