Invention Grant
- Patent Title: Methods and apparatus for forming semiconductor
- Patent Title (中): 用于形成半导体的方法和装置
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Application No.: US14606884Application Date: 2015-01-27
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Publication No.: US09523158B2Publication Date: 2016-12-20
- Inventor: Takao Yonehara , Karl J. Armstrong , Fatih Mert Ozkeskin
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: B32B38/10
- IPC: B32B38/10 ; C30B33/00 ; C30B25/02 ; H01L21/677 ; H01L21/304 ; H01L21/306 ; B32B43/00 ; H01L21/673 ; H01L21/683 ; H01L21/67 ; H01L21/687 ; H01L21/02
Abstract:
Method and apparatus for forming free-standing, substantially monocrystalline semiconductor substrates is described. A template substrate is subjected to a process of forming a porous layer on each major surface of the template substrate. The porous layer is smoothed, and then an epitaxial layer is formed on each porous layer. Mechanical energy is used to separate the epitaxial layers from the template substrate, which is recycled by removing any remaining porous and epitaxial material.
Public/Granted literature
- US20150225876A1 METHODS AND APPARATUS FOR FORMING SEMICONDUCTOR Public/Granted day:2015-08-13
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