Invention Grant
- Patent Title: Capacitor structure in an integrated circuit
- Patent Title (中): 集成电路中的电容结构
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Application No.: US14460292Application Date: 2014-08-14
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Publication No.: US09524964B2Publication Date: 2016-12-20
- Inventor: Jing Jing , Shuxian Wu
- Applicant: Xilinx, Inc.
- Applicant Address: US CA San Jose
- Assignee: XILINX, INC.
- Current Assignee: XILINX, INC.
- Current Assignee Address: US CA San Jose
- Agent Keith Taboada; Robert M. Brush
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/08 ; H01L49/02 ; H01L23/522

Abstract:
In an example, a capacitor in an integrated circuit (IC), includes: a first finger capacitor formed in at least one layer of the IC having a first bus and a second bus; a second finger capacitor formed in the at least one layer of the IC having a first bus and a second bus, where a longitudinal edge of the second bus of the second finger capacitor is adjacent a longitudinal edge of the first bus of the first finger capacitor and separated by a dielectric gap; and a first metal segment formed on a first layer above the at least one layer, the first metal segment being electrically coupled to the first bus of the first finger capacitor and increasing a width and a height of the first bus of the first finger capacitor.
Public/Granted literature
- US20160049393A1 CAPACITOR STRUCTURE IN AN INTEGRATED CIRCUIT Public/Granted day:2016-02-18
Information query
IPC分类: