Invention Grant
- Patent Title: Metal layers for a three-port bit cell
- Patent Title (中): 用于三端口位元的金属层
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Application No.: US14620480Application Date: 2015-02-12
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Publication No.: US09524972B2Publication Date: 2016-12-20
- Inventor: Niladri Narayan Mojumder , Ritu Chaba , Ping Liu , Stanley Seungchul Song , Zhongze Wang , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L23/52 ; G11C8/14 ; G11C11/418 ; H01L27/02 ; H01L21/3213 ; H01L21/768 ; H01L23/522 ; H01L23/528
Abstract:
An apparatus includes a first metal layer coupled to a bit cell. The apparatus also includes a third metal layer including a write word line that is coupled to the bit cell. The apparatus further includes a second metal layer between the first metal layer and the third metal layer. The second metal layer includes two read word lines coupled to the bit cell.
Public/Granted literature
- US20160240539A1 METAL LAYERS FOR A THREE-PORT BIT CELL Public/Granted day:2016-08-18
Information query
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