发明授权
US09525065B1 Semiconductor devices including a channel pad, and methods of manufacturing semiconductor devices including a channel pad
有权
包括沟道焊盘的半导体器件，以及包括通道焊盘的半导体器件的制造方法
- 专利标题： Semiconductor devices including a channel pad, and methods of manufacturing semiconductor devices including a channel pad
- 专利标题（中）： 包括沟道焊盘的半导体器件，以及包括通道焊盘的半导体器件的制造方法
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申请号： US14979122申请日： 2015-12-22
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公开(公告)号： US09525065B1公开(公告)日： 2016-12-20
- 发明人: Dong Min Kyeon , Woong Seop Lee , Jin Hyun Shin
- 申请人： Dong Min Kyeon , Woong Seop Lee , Jin Hyun Shin
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel, P.A.
- 优先权： KR10-2015-0158365 20151111
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/20 ; H01L29/78 ; H01L27/115
摘要：
Semiconductor devices are provided. A semiconductor device includes a stack of gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a channel pad on the channel insulating layer. The channel pad has a curved upper surface. Methods of manufacturing semiconductor devices are also provided.