Invention Grant
- Patent Title: Photolithography patterning system using feature parameters
- Patent Title (中): 光刻图案化系统采用特征参数
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Application No.: US14679710Application Date: 2015-04-06
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Publication No.: US09529960B2Publication Date: 2016-12-27
- Inventor: Jin Choi , Heung-suk Oh , Sin-jeung Park , Rae-won Yi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2012-0087353 20120809
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/308 ; G03F1/00 ; H01L21/027 ; G03F7/20
Abstract:
A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter. A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed.
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