Invention Grant
US09530639B2 Method of preparing ZnO nanowire and ZnO nanowire prepared thereby
有权
制备由其制备的ZnO纳米线和ZnO纳米线的方法
- Patent Title: Method of preparing ZnO nanowire and ZnO nanowire prepared thereby
- Patent Title (中): 制备由其制备的ZnO纳米线和ZnO纳米线的方法
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Application No.: US14537207Application Date: 2014-11-10
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Publication No.: US09530639B2Publication Date: 2016-12-27
- Inventor: Kyunghoon Cho , Sangwook Kim , Donghyeok Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Applicant Address: KR Suwon-si KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- Current Assignee Address: KR Suwon-si KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2014-0036980 20140328
- Main IPC: B05D5/12
- IPC: B05D5/12 ; C09K11/02 ; H01L33/32 ; H01L31/18 ; H01L41/37 ; H01L31/0328 ; H01L21/02 ; B82Y10/00 ; H01L29/24 ; H01L29/06
Abstract:
A method of preparing a ZnO nanowire, and a ZnO nanowire prepared by the method are provided. The method of preparing a ZnO nanowire includes: preparing a zinc chalcogenide solution by dissolving zinc chalcogenide in a solvent; applying the zinc chalcogenide solution onto a substrate; drying the zinc chalcogenide solution applied onto the substrate; and annealing the substrate in the presence of oxygen after the drying the zinc chalcogenide solution.
Public/Granted literature
- US20150279669A1 METHOD OF PREPARING ZnO NANOWIRE AND ZnO NANOWIRE PREPARED THEREBY Public/Granted day:2015-10-01
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