Invention Grant
US09530683B2 Forming source/drain zones with a dielectric plug over an isolation region between active regions
有权
在有源区域之间的隔离区域上形成具有介电插塞的源极/漏极区域
- Patent Title: Forming source/drain zones with a dielectric plug over an isolation region between active regions
- Patent Title (中): 在有源区域之间的隔离区域上形成具有介电插塞的源极/漏极区域
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Application No.: US14534454Application Date: 2014-11-06
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Publication No.: US09530683B2Publication Date: 2016-12-27
- Inventor: John Hopkins , James Matthew , Jie Sun , Gordon Haller
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/762 ; H01L27/115
Abstract:
An embodiment includes forming an isolation region between first and second active regions in a semiconductor, forming an opening between the first and second active regions by removing a portion of the isolation region, and forming a dielectric plug within the opening so that the dielectric plug is between the first and second active regions and so that a portion of the dielectric plug extends below upper surfaces of the first and second active regions. The dielectric plug may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.
Public/Granted literature
- US20150064871A1 Forming Source/Drain Zones with a Delectric Plug Over an Isolation Region Between Active Regions Public/Granted day:2015-03-05
Information query
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