Invention Grant
US09530770B2 Integrated circuits with resistor structures formed from gate metal and methods for fabricating same
有权
具有由栅极金属形成的电阻结构的集成电路及其制造方法
- Patent Title: Integrated circuits with resistor structures formed from gate metal and methods for fabricating same
- Patent Title (中): 具有由栅极金属形成的电阻结构的集成电路及其制造方法
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Application No.: US14261021Application Date: 2014-04-24
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Publication No.: US09530770B2Publication Date: 2016-12-27
- Inventor: Alexandru Romanescu , Gerd Zschätzsch , Christian Schippel
- Applicant: GLOBALFOUNDRIES, INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Lorenz & Kopf, LLP
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/06 ; H01L49/02 ; H01L29/66 ; H01L29/78
Abstract:
Integrated circuits having resistor structures formed from gate metal and methods for fabricating such integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate with a resistor area and a transistor area. The method deposits a gate metal over the resistor area and the transistor area of the semiconductor substrate, and the gate metal forms a gate metal layer in the resistor area. The method includes etching the gate metal to form a resistor structure from the gate metal layer in the resistor area. Further, the method includes forming contacts to the resistor structure in the resistor area.
Public/Granted literature
- US20150311272A1 INTEGRATED CIRCUITS WITH RESISTOR STRUCTURES FORMED FROM GATE METAL AND METHODS FOR FABRICATING SAME Public/Granted day:2015-10-29
Information query
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