Invention Grant
- Patent Title: Current detection circuit and semiconductor integrated circuit device
- Patent Title (中): 电流检测电路和半导体集成电路器件
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Application No.: US14362623Application Date: 2012-12-11
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Publication No.: US09531186B2Publication Date: 2016-12-27
- Inventor: Keisuke Yagyu , Kazuhiro Umetani
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2011-277164 20111219
- International Application: PCT/JP2012/007889 WO 20121211
- International Announcement: WO2013/094148 WO 20130627
- Main IPC: H02H9/02
- IPC: H02H9/02 ; G01R19/00 ; H02M1/00

Abstract:
In a current detection circuit, a first circuit is connected between a first terminal and a second terminal, and a second circuit is connected between a third terminal and a fourth terminal. The second terminal and the fourth terminal are commonly connected. When a first current flows between the first and second terminals, voltage drop occurs in the first circuit. A current control circuit controls the first current to make an application voltage between the first and second terminals substantially same as an application voltage between the third and fourth terminals. When the first circuit has voltage drop same as the second circuit, the first current has the amount proportional to the second current. A detection circuit detects a current flowing between the first terminal and the third terminal by detecting the first current controlled by the current control circuit or the second current.
Public/Granted literature
- US20140334051A1 CURRENT DETECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2014-11-13
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