Invention Grant
US09534295B2 Chamber pressure control apparatus for chemical vapor deposition systems
有权
用于化学气相沉积系统的腔室压力控制装置
- Patent Title: Chamber pressure control apparatus for chemical vapor deposition systems
- Patent Title (中): 用于化学气相沉积系统的腔室压力控制装置
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Application No.: US14304548Application Date: 2014-06-13
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Publication No.: US09534295B2Publication Date: 2017-01-03
- Inventor: David K. Carlson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: F17D1/02
- IPC: F17D1/02 ; F17C1/00 ; C23C16/44 ; C23C16/455 ; C23C16/52

Abstract:
In one embodiment, a pressure control assembly includes a cylindrical hollow body having an opening to receive a ballast gas, a first and second flange, and a first and second cone. The first flange is coupled to a first end of the body, and a second flange is coupled to an opposing end of the body. The first cone is coupled to the first flange, and the second cone is coupled to the second flange. A method for controlling pressure in a chamber includes measuring a pressure of the chamber and a pressure of an exhaust system coupled to the chamber. The method includes dynamically adjusting the pressure in the exhaust system in order to adjust the pressure in the chamber, by creating a first pressure drop that is greater than a second pressure drop in the exhaust system.
Public/Granted literature
- US20150020891A1 CHAMBER PRESSURE CONTROL APPARATUS FOR CHEMICAL VAPOR DEPOSITION SYSTEMS Public/Granted day:2015-01-22
Information query
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