Invention Grant
US09536747B2 Method for treating a gallium nitride layer comprising dislocations
有权
用于处理包含位错的氮化镓层的方法
- Patent Title: Method for treating a gallium nitride layer comprising dislocations
- Patent Title (中): 用于处理包含位错的氮化镓层的方法
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Application No.: US14464158Application Date: 2014-08-20
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Publication No.: US09536747B2Publication Date: 2017-01-03
- Inventor: Arnaud Yvon
- Applicant: STMICROELECTRONICS (TOURS) SAS
- Applicant Address: FR Tours
- Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee Address: FR Tours
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1358324 20130830
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/02 ; H01L21/322 ; H01L29/20 ; H01L29/66
Abstract:
A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.
Public/Granted literature
- US20150064881A1 METHOD FOR TREATING A GALLIUM NITRIDE LAYER COMPRISING DISLOCATIONS Public/Granted day:2015-03-05
Information query
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