发明授权
- 专利标题： Ion energy control by RF pulse shape
- 专利标题（中）： 离子能量由RF脉冲形状控制
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申请号： US14570859申请日： 2014-12-15
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公开(公告)号： US09536749B2公开(公告)日： 2017-01-03
- 发明人: Alexei Marakhtanov , Zhigang Chen , John Patrick Holland
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Martine Penilla Group, LLP
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01L21/67 ; H01J37/32
摘要：
A method for slope control of ion energy is described. The method includes receiving a setting indicating that an etch operation is to be performed using a radio frequency (RF) pulse signal. The RF pulse signal includes a first state and a second state. The first state has a higher power level than the second state. The method further includes receiving a pulse slope associated with the RF pulse signal. The pulse slope provides a transition between the first state and the second state. Also, the pulse slope is other than substantially infinite for reducing an amount of ion energy during the etch operation. The method includes determining power levels and timings for achieving the pulse slope and sending the power levels and the timings to an RF generator to generate the RF pulse signal.
公开/授权文献
- US20160172216A1 Ion Energy Control By RF Pulse Shape 公开/授权日：2016-06-16
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