发明授权
- 专利标题： Tungsten film forming method, semiconductor device manufacturing method, and storage medium
- 专利标题（中）： 钨膜形成方法，半导体器件制造方法和存储介质
-
申请号： US14664945申请日： 2015-03-23
-
公开(公告)号： US09536782B2公开(公告)日： 2017-01-03
- 发明人: Takanobu Hotta , Yasushi Aiba , Koji Maekawa
- 申请人： TOKYO ELECTRON LIMITED
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权： JP2014-061929 20140325; JP2015-012922 20150127
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/768 ; C23C16/08 ; C23C16/455 ; C23C16/46 ; H01L21/3205 ; C23C16/14 ; H01L21/285
摘要：
A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.
公开/授权文献
信息查询
IPC分类:
