Invention Grant
US09536833B2 Semiconductor device allowing metal layer routing formed directly under metal pad
有权
半导体器件允许直接在金属焊盘下方形成金属层布线
- Patent Title: Semiconductor device allowing metal layer routing formed directly under metal pad
- Patent Title (中): 半导体器件允许直接在金属焊盘下方形成金属层布线
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Application No.: US15164889Application Date: 2016-05-26
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Publication No.: US09536833B2Publication Date: 2017-01-03
- Inventor: Chun-Liang Chen
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L27/088 ; H01L23/522
Abstract:
A semiconductor device may include a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device and is directly contacting the first metal layer. The first specific metal layer routing is formed on a second metal layer of the semiconductor device and under the metal pad. In addition, the semiconductor device may include at least one via plug for connecting the first specific metal layer routing to at least one metal region in the first metal layer, where the aforementioned at least one via plug is formed directly under the metal pad.
Public/Granted literature
- US20160268202A1 SEMICONDUCTOR DEVICE ALLOWING METAL LAYER ROUTING FORMED DIRECTLY UNDER METAL PAD Public/Granted day:2016-09-15
Information query
IPC分类:
