发明授权
- 专利标题： Heat spreader on GaN semiconductor device
- 专利标题（中）： 散热器在GaN半导体器件上
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申请号： US14922017申请日： 2015-10-23
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公开(公告)号： US09536965B2公开(公告)日： 2017-01-03
- 发明人: Yi Pei , Mengjie Zhou , Naiqian Zhang
- 申请人： Dynax Semiconductor, Inc.
- 申请人地址： CN Kunshan
- 专利权人： DYNAX SEMICONDUCTOR, INC.
- 当前专利权人： DYNAX SEMICONDUCTOR, INC.
- 当前专利权人地址： CN Kunshan
- 代理机构： Fleiner IP Law, LLC
- 代理商 Zareefa Burki Flener
- 优先权： CN201410577484 20141024
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L29/47 ; H01L29/778 ; H01L29/16 ; H01L29/45 ; H01L29/40 ; H01L29/08 ; H01L29/20 ; H01L29/06 ; H01L29/41 ; H01L23/373
摘要：
A semiconductor device comprises: a substrate; a multilayer semiconductor layer located on the substrate; a source located on the multilayer semiconductor layer, the source including a first source portion inside an active region and a second source portion inside a passive region; a drain located on the multilayer semiconductor layer, the drain including a first drain portion inside the active region and a second drain region inside the passive region; a gate located on the multilayer semiconductor layer, the gate including a first gate portion inside the active region and a second gate portion inside the passive region, and the first gate portion being in a form of interdigital among the first source portion and the first drain portion; and a heat dissipating layer disposed at one or more of the first source portion, the first drain portion, the first gate portion, the second source portion, the second drain portion and the second gate portion.
公开/授权文献
- US20160118460A1 SEMICONDUCTOR DEVICE 公开/授权日：2016-04-28
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