Invention Grant
US09540234B2 Nanogap device and method of processing signal from the nanogap device
有权
Nanogap器件和处理来自nanogap器件的信号的方法
- Patent Title: Nanogap device and method of processing signal from the nanogap device
- Patent Title (中): Nanogap器件和处理来自nanogap器件的信号的方法
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Application No.: US13855991Application Date: 2013-04-03
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Publication No.: US09540234B2Publication Date: 2017-01-10
- Inventor: Chang-seung Lee , Yong-sung Kim , Jeo-young Shim , Joo-ho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0124463 20121105
- Main IPC: G01N33/487
- IPC: G01N33/487 ; B82Y15/00 ; B82Y99/00

Abstract:
A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.
Public/Granted literature
- US20140125322A1 NANOGAP DEVICE AND METHOD OF PROCESSING SIGNAL FROM THE NANOGAP DEVICE Public/Granted day:2014-05-08
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