Invention Grant
- Patent Title: Methods of etching films with reduced surface roughness
- Patent Title (中): 蚀刻具有降低的表面粗糙度的膜的方法
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Application No.: US14793977Application Date: 2015-07-08
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Publication No.: US09540736B2Publication Date: 2017-01-10
- Inventor: Benjamin Schmiege , Nitin K. Ingle , Srinivas D. Nemani , Jeffrey W. Anthis , Xikun Wang , Jie Liu , David Benjaminson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; C25F3/00 ; C23F1/12 ; C30B33/12 ; C23F4/00
Abstract:
Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
Public/Granted literature
- US20160032460A1 Methods Of Etching Films With Reduced Surface Roughness Public/Granted day:2016-02-04
Information query
