Invention Grant
- Patent Title: Magnetoresistive sensor with stop-layers
- Patent Title (中): 具有停止层的磁阻传感器
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Application No.: US14309012Application Date: 2014-06-19
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Publication No.: US09542961B2Publication Date: 2017-01-10
- Inventor: Carolyn Pitcher Van Dorn , Thomas Roy Boonstra , Eric Walter Singleton , Shaun Eric McKinlay
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: Holzer Patel Drennan
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11B5/31 ; G11B5/11 ; G11B5/40

Abstract:
Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.
Public/Granted literature
- US20160293186A9 MAGNETORESISTIVE SENSOR WITH STOP-LAYERS Public/Granted day:2016-10-06
Information query
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